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* Scientific Article * Impact Factor 6.630 |
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Gulyamov, G., Erkaboev, U.I., & Gulyamov, A.G.
The dependence of the energy absorbed photon on the magnetic field in semiconductors. |
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Full Article: PDF
Scientific Object Identifier: http://s-o-i.org/1.1/TAS-10-66-11
DOI: https://dx.doi.org/10.15863/TAS.2018.10.66.11
Language: English
Citation: Gulyamov, G., Erkaboev, U.I., & Gulyamov, A.G. (2018). The dependence of the energy absorbed photon on the magnetic field in semiconductors. ISJ Theoretical & Applied Science, 10 (66), 70-77. Soi: http://s-o-i.org/1.1/TAS-10-66-11 Doi: https://dx.doi.org/10.15863/TAS.2018.10.66.11 |
Pages: 70-77
Published: 30.10.2018
Abstract: Compared change the oscillation of the joint density of states by the energy absorbed photon for different Landau levels in the non-parabolic and parabolic zone. It is shown that in the non-quadratic dispersion law the maximum frequency of the absorbed light and the band gap nonlinearly depend on the magnetic field. The theoretical results are compared with experimental results, obtained for InAs.
Key words: joint density of states, Landau levels, non-parabolic and parabolic zone, photon, semiconductor.
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